INFLUENCE OF NITROGEN ON THERMAL WARPAGE IN CZOCHRALSKI SILICON WAFERS

１ＩＮＴＲＯＤＵＣＴＩＯＮＦｏｒｍａｎｙｙｅａｒｓ，ｗａｒｐａｇｅｏｆｓｉｌｉｃｏｎｗａｆｅｒｓｈａｓｂｅｅｎｃｏｎｃｅｒｎｅｄｉｎｖｅｒｙｌａｒｇｅｓｃａｌｅｉｎｔｅｇｒａｔｅｄｃｉｒｃｕｉｔ（ＶＬＳＩ）ｍａｎｕｆａｃｔｕｒｉｎｇ［１－４］．Ｕｓ...

The effect of nitrogen on thermal warpage in nitrogendoped Czochralski (CZ) silicon wafers after heat treatment was studied. After preannealing at 1 000 for 6 h, the warpage of the silicon wafers was suppressed during subsequent thermal warping test due to the formation of nitrogenoxygen clusters with smaller size. After preannealing at 1 000 for 16 h, the silicon wafers show a large increase during thermal warping test due to the large amount of oxygen precipitation. The results indicate that the nitrogen is very effective to increasing the mechanical strength of silicon wafers of CZ silicon at high temperature.