摘要
The photocurrent-voltage characteristics and photoelectric sensitivity of a-Si:H samples with slit and comb electrodes are measured. A method for calculating the charge intensifying gain from the photoelectric sensitivity is proposed. The obtained charge intensifying gain of a-Si:H under an electric field of 105 V/cm through this method is as high as 4.3×103. The generation process of the charge intensification effect in a-Si:H is discussed on the basis of the energy level diagram. And the product of electron’s mobility and its lifetime is calculated from the measured values of the gains.
The photocurrent-voltage characteristics and photoelectric sensitivity of a-Si:H samples with slit and comb electrodes are measured. A method for calculating the charge intensifying gain from the photoelectric sensitivity is proposed. The obtained charge intensifying gain of a-Si:H under an electric field of 105 V/cm through this method is as high as 4.3×103. The generation process of the charge intensification effect in a-Si:H is discussed on the basis of the energy level diagram. And the product of electron's mobility and its lifetime is calculated from the measured values of the gains.
基金
National Natural Science Foundation of China
