摘要
叙述了影响离子注入均匀性的几个主要因素，其中包括束流品质，离子束聚焦与扫描以及束流大小选择等。同时介绍了如何控制这些因素来获取优异的注入均匀性，通过这些控制手段，均匀性可以优于１ ％ ，结果令人满意。
In this paper a few primary factors which have influence on implant dose uniformity are described,including the quality of beam current,focusing and scanning of ion-beam,as well as the selection of beam current big or small,etc.And to obtain fine uniformity how to control the factors mentioned above is presented as well.The satisfactory uniformity of δ ≤1% is obtained by means of these control methods.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
1999年第4期262-264,共3页
Semiconductor Optoelectronics
关键词
半导体工艺
离子注入
薄膜技术
均匀性
semiconductor technology,ion implantation,films technology,uniformity
