半导体微腔激光器

Microcavity semiconductor lasers

文章简要叙述了微腔激光器的基本工作原理。采用先进的ＬＰＥ及反应离子刻蚀等微细加工技术制作了盘型－ 图钉式微腔结构，测得其有源区的光荧光谱的半宽度为０ ．０３２ ｅＶ，波长为８１５ ．３３ ｎｍ 。

The article briefly describes the basic operating principle of the device whose microcavity structure is fabricated by such micromachining technology as modified LPE and reactive ion etching.The measured half width of photoluminescence spectrum in the active area is 0.032 eV with the wavelength of 815.33 nm.