摘要
利用改进的液相外延技术生长出了GaAs/GaAlAs 夜视系统用光源。样品质量达到了设计要求。测量结果表明,样品在10 K 下的光荧光谱的峰值波长为926 .26 nm 。利用该材料制作的激光二极管,其峰值输出功率达到15 W。
GaAlAs/GaAs used for light source of night vision systems has been grown by modified LPE technology. The experimental results show that sample's quality meets the requirement of design and photoluminescence peak wavelength is 926.26 nm at 10 K . The peak output power of laser diodes using this material is up to 15 W.
出处
《半导体光电》
CAS
CSCD
北大核心
1999年第5期363-365,共3页
Semiconductor Optoelectronics