摘要
利用受光PN 结伏安特性方程,分别对受光PN 结的光电流输出、注入电流输出和零电流输出三种情况进行了讨论,进一步对注入光敏器件的物理基础进行探讨,并对一些实验问题进行讨论。
Discussion is made on photocurrent output,injection current output and zero current output for photoreceiving PN junction by means of I - V equation of photoreceiving PN junction.Further survey is carried out on physical elements of the injection photodetector followed by description of some experiment subjects.
出处
《半导体光电》
CAS
CSCD
北大核心
1999年第6期441-445,共5页
Semiconductor Optoelectronics
关键词
光敏三极管
注入光敏器件
光电二极管
phototransistor
injection photosensitive device
photodiode