摘要
利用低能中性团簇束流淀积（ＬＥＣＢＤ）方法制备硅团簇薄膜，观察到Ｓｉ团簇特殊的分形生长现象，并对此非平衡动力学过程作初步的探讨。
Si cluster-assembled film has been prepared by low energy cluster beam deposition (LECBD). Special fractal growth of the Si film has been observed. This growth process may be connected with nonequilibrium dynamics of cluster beam, and nucleation aggregation processes.
出处
《原子与分子物理学报》
CAS
CSCD
北大核心
1998年第S1期275-276,共2页
Journal of Atomic and Molecular Physics
关键词
SI
LECBD
分形生长
Si LECBD fractals nonequilibrium dynamics
