摘要
用射频共溅射方法和退火工艺制备厂埋入 SiO_2中碳的复合薄膜,并在室温下得到了强的可见光致发光谱(峰值在2.136eV)。用拉曼散射谱和红外透射谱对样品进行了测量,分析厂复合膜的微结构,研究了不同碳含量对光致发光谱的影响,并对 C-SiO_2复合薄膜的光致发光机理进行了讨论。
Carbon embedded SiO_2 films are prepared by co-sputtreing technique. Photoluminescence(PL)measurement show that strong visible PL is produced upon annealing treatment in room temperature.Raman and IR transmission spectra of samples are measured for analysing microstructure of the films.The effects of carbon content on Photoluminescence spectra are researched and the photoluminescence mechanism of the films are also discussed.
出处
《西北民族大学学报（自然科学版）》
1998年第1期99-102,共4页
Journal of Northwest Minzu University(Natural Science)
