摘要
对四探针测试半导体薄层电阻中二维电流场的电势分布采用有限元法（ＦＥＭ）数值计算，并提出了计算模型。对几种常用的测试结构进行计算其电势分布证明了有限元方法的正确性。与以前所采用的镜像源法和图形变换法相比，该方法具有对任意形状的样品和任意放置探针具有同样简单和计算通用的特点。
The finite element method(FEM) is employed to calculate potential distributions of two dimensional current fields in semiconductor sheet resistance measurements using a four point probe and the model of calculation is presented, which has been tested and proved by calculating the potential distribution of several measurement shaped samples. The FEM has characteristic of simpler and more common for any shape samples than the methods of electrical image and map transformation.
出处
《计算物理》
CSCD
北大核心
1998年第2期39-44,共6页
Chinese Journal of Computational Physics
关键词
四探针
电势分布
数值计算
有限元法
four point probe
potential distribution
numerical calculation
FEM.
