摘要
A new photoelastic method of obtaining mode I stress intensity factor(SIF) is presented. The method considers the influence of far field stress, σ ox , on the value of SIF. The only information needed for K Ⅰ calculation is the area between isochromatic fringe loops. The method is examined by two kinds of specimen in different load cases.Experimental results show that it is quite simple and of high precision.
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