摘要
SILICON is a quite important material in the application of energy resources technology. With the development of ion-implantation technique and the increasing interest in dopping, it is very important to know the relationship between the vacacies induced by the particle irradiation damage and the annealing temperature. The positron annihilation is a very useful method for studying defects in the semiconductor, because the annihilation characteristics of trapped positron are influenced by the charge of the defects. It has been shown that the positrons can be trapped by defects created by irradi-
