Influence of curved interfaces of phase change on the radial segregation of crystal growth 被引量：1

Influence of curved interfaces of phase change on the radial segregation of crystal growth

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摘要 THE radial uniformity of components is an important parameter for crystal growth of a semiconductor of binary alloy. Radial segregation may be influenced by many factors, such as the convection, curved solidification interface, curved melting interface and others.

作者 HU WenruiInstitute of Mechanics, Chinese Academy of Sciences, Beijing 100080, China

出处《Chinese Science Bulletin》 SCIE EI CAS 1997年第7期601-605,共5页

关键词 MICROGRAVITY SCIENCE CRYSTAL growth DIFFUSION process. microgravity science crystal growth diffusion process

分类号 O782 [理学—晶体学]

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Chinese Science Bulletin

1997年第7期

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Influence of curved interfaces of phase change on the radial segregation of crystal growth 被引量：1

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