摘要
THE chemical vapor deposition (CVD) methods have been developed so much in the past tenyears that it has become less expensive to deposit a thick CVD diamond film than to polish thediamond. The polycrystalline films nomnally exhibit a pronounced roughness because there arelots of large pointed grains on the surface of the films. On the other hand, the thickness unityof diamond film is poor because of the effects of deposition condition, especially for those syn-thesized by the methods of hot filament CVD (HFCVD) and electron assistant CVD(EACVD). Poor thickness unity and rough surface of thick diamond film limits their poten-
