摘要
Ion beam assisted pulsed laser deposition of biaxially aligned yttria-stabilized zirconia (YSZ) was used to produce a buffer layer for YBCO film on polycrystalline metallic substrate.The YSZ layers were biaxially aligned with (001) axis normal to the substrate.The minimum FWHM of (111) phi-scan of the YSZ was 19,and the minimum FWHM of the rocking curve of YSZ was 4.5.Highly c-axis oriented biaxially aligned YBCO thin films were epitaxially grown by laser ablation on these layers,with JC(77K,0T)=2.1×105A/cm2,Tc0=90.5 K.
Ion beam assisted pulsed laser deposition of biaxially aligned yttria-stabilized zirconia (YSZ) was used to produce a buffer layer for YBCO film on polycrystalline metallic substrate.The YSZ layers were biaxially aligned with (001) axis normal to the substrate.The minimum FWHM of (111) phi-scan of the YSZ was 19,and the minimum FWHM of the rocking curve of YSZ was 4.5.Highly c-axis oriented biaxially aligned YBCO thin films were epitaxially grown by laser ablation on these layers,with JC(77K,0T)=2.1×105A/cm2,Tc0=90.5 K.
基金
Project supported by the National Center for R&D on Superconductivity of China.
