摘要
YBa2Cu3O7-x(YBCO) thin film has been epitaxially deposited on (1120) sapphire with Y2O3-stabilized ZrO2 (YSZ) buffer layer and shown a high critical current density Jc of 1. 6×106A/cm2 at 77 K in zero magnetic field. The orientation relationship of the multilayer film superconductor has been determined. The(001) plane of the YBCO film is parallel to the(100) surface of the YSZ intermediate layer. YSZ buffer layer with(100) preferred orientation is about 20 nm thick and contains element Ba, due to out-diffusion of Ba from YBCO layer. The(100) preferred orientation of YSZ buffer permits the growth of high quality YBCO thin film. Y2BaCuO5 precipitates with small size distribute uniformly in the YBCO thin film and it is favourable to raise critical current density Jc.
YBa2Cu3O7-x(YBCO) thin film has been epitaxially deposited on (1120) sapphire with Y2O3-stabilized ZrO2 (YSZ) buffer layer and shown a high critical current density Jc of 1. 6×106A/cm2 at 77 K in zero magnetic field. The orientation relationship of the multilayer film superconductor has been determined. The(001) plane of the YBCO film is parallel to the(100) surface of the YSZ intermediate layer. YSZ buffer layer with(100) preferred orientation is about 20 nm thick and contains element Ba, due to out-diffusion of Ba from YBCO layer. The(100) preferred orientation of YSZ buffer permits the growth of high quality YBCO thin film. Y2BaCuO5 precipitates with small size distribute uniformly in the YBCO thin film and it is favourable to raise critical current density Jc.
