摘要
Red sensitive (Cu, In) doped CdS of high moisture-resistance was reported to have been prepared from heat-treatment of CdS with CuSO<sub>4</sub> and In<sub>2</sub> (SO<sub>4</sub>)<sub>3</sub> in the presence of NaCl-CdCl<sub>2</sub> flux in high proportion (CdS: mixed flux ≤2: 1). In this work a new red sensitive and also strongly moisture-resistant (Cu, Bi) doped CdS polycrystalline semiconductor was successfully prepared by first admixing the substrate CdS powder with appropriate quantity of BiOCl in addition to CuCl<sub>2</sub> and then heat-treating with NaCl-CdCl<sub>2</sub>