摘要
Red sensitive （Cu, In） doped CdS of high moisture-resistance was reported to have been prepared from heat-treatment of CdS with CuSO<sub>4</sub> and In<sub>2</sub> （SO<sub>4</sub>）<sub>3</sub> in the presence of NaCl-CdCl<sub>2</sub> flux in high proportion （CdS: mixed flux ≤2: 1）. In this work a new red sensitive and also strongly moisture-resistant （Cu, Bi） doped CdS polycrystalline semiconductor was successfully prepared by first admixing the substrate CdS powder with appropriate quantity of BiOCl in addition to CuCl<sub>2</sub> and then heat-treating with NaCl-CdCl<sub>2</sub>
