摘要
Due to the applications in electronics and optics in the past two decades, ferroelectricthin films (BaTiO<sub>3</sub>, PbTiO<sub>3</sub>, (Pb<sub>1-x</sub>La<sub>x</sub>)(Zr<sub>y</sub>Ti<sub>1-y</sub>)O<sub>3</sub>（PLZT x/y/1-y）, LiNbO<sub>3</sub>, Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>,etc.)have been widely investigated. Especially, ferroelectric thin film memory, combining the ad-vantage of semiconductor memory with that of magnetic memory, has properties including highspeed, high density, nonvolatility and good radiation hardness, and can be compatible
基金
Project supported by the National 863 High Technology Program of China.
