PRESSURE－INDUCED 4p→4s ELECTRON TRANSFER AND ITS EFFECT ON ELECTRICAL TRANSPORT OF COPPER

PRESSURE-INDUCED 4p→4s ELECTRON TRANSFER AND ITS EFFECT ON ELECTRICAL TRANSPORT OF COPPER

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摘要ＰＲＥＳＳＵＲＥ－ＩＮＤＵＣＥＤ４ｐ→４ｓＥＬＥＣＴＲＯＮＴＲＡＮＳＦＥＲＡＮＤＩＴＳＥＦＦＥＣＴＯＮＥＬＥＣＴＲＩＣＡＬＴＲＡＮＳＰＯＲＴＯＦＣＯＰＰＥＲＰＲＥＳＳＵＲＥ－ＩＮＤＵＣＥＤ４ｐ→４ｓＥＬＥＣＴＲＯＮＴＲＡＮＳＦＥＲＡＮＤＩＴＳＥＦＦＥ... On the basis of band theories,the pressure-induced 4p→4s electron transfer of copper andits effect on the densities of states near Fermi level E_F in the 4p and 4s bands are discussed.The ex-planation for the pressure dependence of electrical resistance of copper under compression up to 41GPa is offered.

作者 Pu,Fengnian(Institute of High-Temperature and High-Pressure Physics,Chengdu University of Science and Technology,Chengdu 610065)

出处《中国有色金属学会会刊：英文版》 CSCD 1994年第2期82-85,共4页 Transactions of Nonferrous Metals Society of China

关键词 high pressure COPPER ELECTRON TRANSFER ELECTRICAL resistance high pressure copper electron transfer electrical resistance

分类号 TG146.11 [金属学及工艺—金属材料]

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中国有色金属学会会刊：英文版

1994年第2期

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PRESSURE－INDUCED 4p→4s ELECTRON TRANSFER AND ITS EFFECT ON ELECTRICAL TRANSPORT OF COPPER

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