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CALCULATION OF PHASE DIAGRAM FOR PSEUDOBINARY GaAs-InAs

CALCULATION OF PHASE DIAGRAM FOR PSEUDOBINARY GaAs-InAs
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摘要 CALCULATIONOFPHASEDIAGRAMFORPSEUDOBINARYGaAs-InAs¥Qiao,Huan;Shen,Jianyun;Li,Guoxun(GeneralResearchInstituteforNonferrousMetal... The phase diagram for the pseudobinary GaAs-InAs has been calculated using the optimized thermodynamic data on accounting the influence of the elastic energy. which is induced by the mismatch of the growing lattice with the substrate in the process of epitaxy. The result shows that the miscibility gap in the solic phase of this system would be restrained by this elastic energy.
出处 《中国有色金属学会会刊:英文版》 CSCD 1994年第4期25-28,共4页 Transactions of Nonferrous Metals Society of China
关键词 GaAs-InAs Ⅲ-Ⅴ COMPOUND calculation of phase DIAGRAM MISCIBILITY gap GaAs-InAs Ⅲ-Ⅴ compound calculation of phase diagram miscibility gap
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