摘要
The initial stage of Ag film growth on Cu(100). Ta(100) and Ta(110) single crystals as well as YBaCuO on Si single crystal covered by Pd was investigated in situ by means of LAS 600 surface analysis system with a sputtering source in sample preparation chamber. The results show that the initial state for Ag / Cu(100) film growth is typical S-K model, for Ag / Ta(100) and Ag / Ta(110)they have the same S-K characteristics, but due to the different surface energies of two crystalline planes. there is some difference for Ag / Ta (100) and Ag / Ta(110). YBCO sputterjng process is rather complex and Cu is the first element appearing in the film.
The initial stage of Ag film growth on Cu(100). Ta(100) and Ta(110) single crystals as well as YBaCuO on Si single crystal covered by Pd was investigated in situ by means of LAS 600 surface analysis system with a sputtering source in sample preparation chamber. The results show that the initial state for Ag / Cu(100) film growth is typical S-K model, for Ag / Ta(100) and Ag / Ta(110)they have the same S-K characteristics, but due to the different surface energies of two crystalline planes. there is some difference for Ag / Ta (100) and Ag / Ta(110). YBCO sputterjng process is rather complex and Cu is the first element appearing in the film.
