PRELIMINARY OBSERVATION OF CROSS-SECTIONAL STRUCTURE OF 3-D CMOS INVERTER BY HVEM

Recently, 3-Dimension Complementary Metal-Oxide Semiconductor(3-D CMOS)has attracted great interest of many scholars due to its high packing density, simple connection and improved characteristics. The present 3-D CMOS consists of an n-channel MOS(NMOS) transistor on a P-type silicon substrate and a p-channel MOS(PMOS) tran-