摘要
以氧化锌半导体陶瓷的微观模型为基础,分析影响氧化锌压敏电阻器固有电容量的各种因素,重点分析如何控制氧化锌压敏电阻器固有电容量的问题。给出了有关实验数据并对实验结果进行了讨论,得出了在理论上和实践中有意义的结论。
By the microstructure model for zinc oxide semicondutive ceramics, analyses various factors which affect the natural capacitance value of zinc oxide ceramics and mainly discusses how to control the value. Experimental data show: 1) the product of natural capacitance and thickness of the zinc oxide varistor is approximately a constant; 2) the material formulation is most important factor for natural capacitance and the firing temperature is of importance to it too. Based on some suitable agent is added in material formulation, the natural capacitance value of the developed varistor(10mm in diameter and 3mm thick) attains<100pF.
出处
《山东大学学报（工学版）》
CAS
1990年第2期40-44,共5页
Journal of Shandong University（Engineering Science）
关键词
压敏电阻器
电容
半导体陶瓷
氧化锌陶瓷
Varistor
Capacitance
Semicoductive ceramics
Zinc oxide ceramics
