摘要
This paper is a further development of the kinetics theory of thermal oxidation of silicon. The existing theories cannot correctly describe the oxidation law of ultra-thin (thinner than the oxide-Deby length) oxide layers, the experimental results of Jorgensen and the dependence of oxidation rate on oxygen partial pressures. This work surmounts these difficulties and makes the theory more universal. If some effects taken into account in this model are neglected, the results of other models can be derived from this model.
This paper is a further development of the kinetics theory of thermal oxidation of silicon. The existing theories cannot correctly describe the oxidation law of ultra-thin (thinner than the oxide-Deby length) oxide layers, the experimental results of Jorgensen and the dependence of oxidation rate on oxygen partial pressures. This work surmounts these difficulties and makes the theory more universal. If some effects taken into account in this model are neglected, the results of other models can be derived from this model.
基金
Project supported by the National Natural Science Foundation of China.
