SiCw/Al 复合材料的界面

INTERFACE IN SILICON CARBIDE WHISKER REINFORCED ALUMINIUM COMPOSITES

本文研究了 SiCw/Al 金属基复合材料的界面问题。用俄歇电子谱仪(AES)对断口表面和对它进行溅射剥层后分析的结果表明 SiC 晶须与基体 Al 结合良好。通过透射电镜和 X 射线能谱观测,没有发现界面反应层存在的迹象。分析表明既没有C、Si 元素通过界面向基体中的扩散,也没有 Al 通过界面向晶须中的扩散。X 射线衍射试验结果进一步证实了这一点。研究还表明 SiC 晶须与其周围的 Al 基体可能存在某种位向关系。

The interface in SiCw/Al composites was examined.The Auger elec- tron spectroscope(AES)analysis of the fracture surface after the surfa- ce being sputter etched show that the bonding between SiC whisker and aluminium matrix is quite good.It was found by using transmit electron microscope(TEM)and X-ray diffraction analysis that there is no reaction layer at the SiC-Al iaterface.Analyzing results show.that no Si and C can diffuse into the matrix and no Al can diffuse into the whisker either, which was further proved by the X-ray diffraction measuring results. The experimental results also show that there may be certain orientation relationships between the SiC whisker and the nerby matrix.