摘要
A phenomenological model for SiCl_4+H_2 reduction epitaxy with PCl_3 as dopant was established and the concerned parameters were obtained through experiments.We have compiled a computer simulation program of BASIC algorithmic lan- guage to solve diffusion equations numerically and have obtained profiles of impurities in epitaxial layer and in the substrate.The relationship between resistivity of n-type epitaxial layer and the concentration and flow of PCl_3 doping source under a certain growth condition has also been found.The optimum condition for precise control of parameters of epitaxial layer can be chosen by the computer simulation results.These results are very useful to practical production,so that the good economical benefit can be obviously obtained.
A phenomenological model for SiCl_4+H_2 reduction epitaxy with PCl_3 as dopant was established and the concerned parameters were obtained through experiments.We have compiled a computer simulation program of BASIC algorithmic lan- guage to solve diffusion equations numerically and have obtained profiles of impurities in epitaxial layer and in the substrate.The relationship between resistivity of n-type epitaxial layer and the concentration and flow of PCl_3 doping source under a certain growth condition has also been found.The optimum condition for precise control of parameters of epitaxial layer can be chosen by the computer simulation results.These results are very useful to practical production,so that the good economical benefit can be obviously obtained.
