摘要
In this paper the electrochemical characteristics of GaAs/EL junction, including the I-V, C-V curves, response rate for signal voltage, temperature change range and stability for junction parameter are presented. On the basis of these studies, the deep level in GaAs has been measured by LJDLTS technique for the first time. It is shown that this technique seems to be more feasible, and reliable approach to measure some special deep levels in GaAs than conventional DLTS.
In this paper the electrochemical characteristics of GaAs/EL junction, including the I-V, C-V curves, response rate for signal voltage, temperature change range and stability for junction parameter are presented. On the basis of these studies, the deep level in GaAs has been measured by LJDLTS technique for the first time. It is shown that this technique seems to be more feasible, and reliable approach to measure some special deep levels in GaAs than conventional DLTS.
