Study of Carbon Contaminated Epitaxial Silicon

Study of Carbon Contaminated Epitaxial Silicon

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摘要 The properties of the carbon contaminated silicon epitaxial layer and its surface have been studied by means of JAMP-10 Auger electron microprobe and JEM-2000FX transmission scanning electron microscope. The results show that the fog defects on the surface are due to carbon contamination. The existence of SiC in the silicon epitaxial layer has been identified by the electron diffraction analysis. The properties of the carbon contaminated silicon epitaxial layer and its surface have been studied by means of JAMP-10 Auger electron microprobe and JEM-2000FX transmission scanning electron microscope. The results show that the fog defects on the surface are due to carbon contamination. The existence of SiC in the silicon epitaxial layer has been identified by the electron diffraction analysis.

作者 Li, Yuzhen Sun, Jiguang Liu, Mingdeng Quan, Baofu

机构地区 General Research Inst for

出处《Rare Metals》 SCIE EI CAS CSCD 1989年第4期64-66,共3页 稀有金属（英文版）

关键词 CARBON Effects CRYSTALS Epitaxial Growth Microscopic Examination Transmission Electron Microscopy Semiconductor Materials DEFECTS Spectroscopy Auger Electron Carbon Effects Crystals Epitaxial Growth Microscopic Examination Transmission Electron Microscopy Semiconductor Materials Defects Spectroscopy, Auger Electron

分类号 TG146.4 [金属学及工艺—金属材料]

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Rare Metals

1989年第4期

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Study of Carbon Contaminated Epitaxial Silicon

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