摘要
The properties of the carbon contaminated silicon epitaxial layer and its surface have been studied by means of JAMP-10 Auger electron microprobe and JEM-2000FX transmission scanning electron microscope. The results show that the fog defects on the surface are due to carbon contamination. The existence of SiC in the silicon epitaxial layer has been identified by the electron diffraction analysis.
The properties of the carbon contaminated silicon epitaxial layer and its surface have been studied by means of JAMP-10 Auger electron microprobe and JEM-2000FX transmission scanning electron microscope. The results show that the fog defects on the surface are due to carbon contamination. The existence of SiC in the silicon epitaxial layer has been identified by the electron diffraction analysis.
