N^+、Xe^+离子注入银薄膜的实验分析

EXPERIMENTAL ANALYSIS OF SILVER THIN FILMS IMPLANTED WITH N^+ AND Xe^+

实验研究了离子注入对多晶银薄膜晶体结构及表面成份的影响。在室温环境下,将能量为24keV的N^+离子和350keV的Xe^+离子以不同的注入剂量注入到多晶银薄膜中。对离子注入前后的银薄膜样品进行了透射电子显微镜(TEM)观察和X射线光电子能谱(XPS)及俄歇电子能谱(AES)分析。经分析发现,离子注入后在银薄膜中出现了再结晶和晶粒长大现象,而且晶粒尺寸随注入离子的剂量增加而增加。当注入的N^+离子剂量≥1.3×10^(17)Ions/cm^2及注入的Xe^+离子剂量达到3×10^(16)Ions/cm^2时,多晶银膜转变成单晶银薄膜。本文对实验结果进行了讨论。

The influence of the N^+ and Xe^+ ions implanting into Ag thin films on the crystal structure and composition of the thin films has beeh investigated in this work. The 24 keV N^+ ions and 350 keV Xe^+ ions were implanted into Ag films at room temperature with various ion doses. The films were analysed by using TEM, XPS and AES before and after implantation. The analytical results showed that the recrystallization and grain growth occured in the Ag films and the grain, size increased with increasing ion doses after ion implantation. The-polycrystalline Ag films were changed into single crystal one when the implanted N^+ ion doses≥1.3x10^(17) ions/cm^2 and Xe^+ ions doses reached 3×10^(16) ions/cm^2. Finally, the experimental results were discussed.