用DLTS和ODLTS技术研究ZnSe晶体中与Ga有关的深能级

STUDIES ON DEEP TRAPS RELATED TO GALLIUM IN ZnSe CRYSTALS BY DLTS AND ODLTS METHODS

本文应用深能级瞬态谱(DLTS)和光深能级瞬态谱(ODLTS)技术研究了掺Ga的ZnSe晶体中的深能级.发现ZnSe:Ga晶体中有一个与Ga有关的施主能级位于导带底下0.17eV处,两个与Ga有关的受主能级分别位于价带顶上0.65eV和0.72eV处.文中还对这些能级的起源进行了讨论.

Deep traps in Ga-doping ZnSe crystals have been investigated by DLTS and ODLTS methods. It is found that there is a donor trap at 0.17eV from the conduction band and two acceptor traps at 0.65eV and 0.72eV above the valencee band respectively.The donor trap at 0.l7eV is considered as one excitated state level of shallow donor gallfum. The acceptor trap at 0.65eV is the self-activated ( SA ) centre, which is identified as the associate between zinic vaccacy and shallow donor gallium. The 0.72eV acceptor trap is probably due to gallium at Se position heavy Ga-doping.