P^+-P-N-N^+型半导体器件中能量转换效应的探讨

STUDY OF ENERGY CONVERSION EFFECTS IN P^+-P-N-N^+ STRUCTURE SEMICONDUCTOR DEVICES

本文对 P^+-P-N-N^+型半导体器件在正向导电情况下器件各区电势,导电载流子输运作了分析,研讨了各区能量转换效应。得出正向导电时的结压降损耗是以载流子复合方式损耗在 P、N、P^+、N^+等中性区,而在 P^+-P、P-N、N—N^+等结区发生"致冷效应",因而电功率损耗公式 P=IV,在半导体 P—N结型器件中的某些微区内作为发热损耗计算式是不适用的。此时还必需考虑电子所处能级的变化。

In this paper,the charge carrier transport and potential distribution in every region Of M-P^+P-N-N^+-M structure semiconductor devices are analysed.The energy conversion effects in these regions are investigated.It is found that there is a cooling effect at the P^+-P,P-N,and N-N^+ junctions, and,the losses of junction potential drops under forward bias conditions will be dissipated in the recombination processes at the P, N, P^+, N^+ neutral regions.Therefore electric power equation P=IV is unapplicable for these regions of P^+-P-N-N^+ structure semiconductor devices.