河南省若干半导体器件的DLTS研究

DLTS STUDY OF SOME SEMICONDUCTOR DEVICES MADE IN HENAN PROVINCE

本文利用深能级瞬态谱(DLTS)技术,对河南省部分厂家生产的若干半导体器件作了DLTS测量,测到了存在于Ge—APD中的两个深能级(E_c-0.26ev和E_c-0.35ev)。分析认为是Fe离子沾污所致,同时获得其俘获截面和浓度,其它器件(开关二级管除外)均未发现有深能级存在。

The technigue, Deep level transient spectroscopy (DLTS), was used to characterize the spectrum of traps in semiconductor devices made by some factories in Henan province. Two deep levels (Ec-0.26ev, Ec-0.35ev) in Ge—APD and a deep level in 2CK72 were observed. Their trap concentrations and capture cross sections were also measured. The reason for existing the deep levels is that the devices were contaminated by Fe ions in production processes. No deep level was observed in other devices.