摘要
设计一种低电压低温漂的基准电流源。首先通过带隙基准电路得到一个基准电压VREF,对输出管进行温度补偿。电压VREF接到一个NMOS输出管的栅极上,调节VREF使得这个输出管工作在零温漂区。这时输出管的阈值电压和迁移率随温度的变化率相互补偿,从而产生一个与温度无关的基准电流IREF。电路采用CSMC 0.5μm DPTM CMOS工艺制造。通过流片验证,该电路输出管的零温漂点为(IZTC=215.4μA,VZTC=1.244 4 V),在-45^+125℃的范围内温度系数为8.1 ppm/℃,在2 V的电源电压下整个电路的功耗仅为0.45 mW。
A current reference is designed,which owns small temperature coefficient and dissipates very low power. Temperature compensation is achieved from a bandgap circuit in order to generate an intermediate voltage reference VREF. This voltage is applied to the gate of NMOS output transistor. Such tHat, this output transistor is biased at Zero Temperature Coefficient（ZTC） point. Then, a temperature- independent current reference IREF is produced by mutual compensation of mobility and threshold voltage variations. This circuit implemented in CSMC 0.5μm double poly triple metal CMOS technology,The result indicates a ZTC point at VZTC of 1. 244 4 V and an IZTC of 215. 4 μA. A temperature coefficient of 8.1 ppm/℃ from -45--125℃ achieved. The power dissipation of the circuit is only 0. 45 mW with 2V supply.
出处
《现代电子技术》
2009年第8期178-181,共4页
Modern Electronics Technique
关键词
基准电流源
带隙基准源
CMOS
低温漂
低电压
current reference
bandgap reference
CMOS
low temperature drift
low power supply
