氨化温度对氨化Si基Ga_2O_3/Cr膜制备GaN纳米结构的影响

Effect of ammoniating temperature of Ga_2O_3/Cr films on fabrication of GaN nanostructure on Si substrates

采用磁控溅射的方法在Si(111)衬底上溅射沉积Ga2O3/Cr膜,并通过氨化的方法在Si(111)衬底上成功合成了六方纤锌矿GaN纳米结构材料,研究了不同的氨化温度对合成GaN纳米材料的影响。采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、透射电子显微镜(TEM)、高分辨透射电子显微镜(HR-TEM)、傅里叶红外吸收(FTIR)光谱来检测样品的形态,结构和成分,并且讨论了GaN纳米结构的生长机理。研究结果表明,在Cr催化合成GaN纳米结构的过程中,氨化温度对其有重要影响,最佳温度是950℃。

Hexagonal wurtzite GaN materials with nanostrueture have been fabricated on Si （111） substrates via ammoniating Ga2O3/Cr films at different temperatures. Cr layers and Ga2O3 films were deposited in turn on Si （111） substrates by radio frequency （r. f. ） magnetron sputtering before the ammoniating process. Scanning e- lectron microscopy, X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the morphology, structure and composition of the samples. The growth mechanism of GaN nano-structure is also discussed. A conclusion can be drawn that hexagonal wurtzite GaN with nanostructure was grown on Si （111） substrates with the assistance of the Cr, and the ammoniating temperature has a great effect on the fabrication of GaN nano materials with this method,and the optimal temperature is 950℃.