摘要
Etectroluminescence peaking at 1.3 μm is observed from high concentration boron-diffused silicon p^＋-n junctions. This emission is efficient at low temperature with a quantum efficiency 40 times higher than that of the band-to-band emission around 1.1 μm, but disappears at room temperature. The 1.3-μm band possibly originates from the dislocation networks lying near the junction region, which are introduced by high concentration boron diffusion.
Etectroluminescence peaking at 1.3 μm is observed from high concentration boron-diffused silicon p^＋-n junctions. This emission is efficient at low temperature with a quantum efficiency 40 times higher than that of the band-to-band emission around 1.1 μm, but disappears at room temperature. The 1.3-μm band possibly originates from the dislocation networks lying near the junction region, which are introduced by high concentration boron diffusion.
基金
supported by the National Natural Science Foundation of China (Nos. 10874001, 50732001, 10674012, and 60877022)
the National "973" Program of China (No. 2007CB613401).
