摘要
从传感器气敏材料的电阻微小变化中可得到许多有用的信息,其电阻对材料的温度非常敏感。实验中所用传感器的气敏材料是在配有加热器的铝基底上沉积SnO2薄膜,通过控制加热器上的电压来改变气敏材料的温度(温度变化范围为25～400℃),研究了温度对材料电阻的影响。通过分析电阻随温度的变化,基于晶界势垒控制模型得到了关于电阻随温度变化的新经验方程,并将此方程的计算结果与实验结果进行了比较。结果表明,此方程可很好地描述某些型号的传感器电阻对温度的依赖行为。
Lots of information can be obtained from fluctuations of resistance of gas sensors. The resistance is highly sensitive to the temperature. In this experiment, gas-sensing materials are SnO2 films that are deposited on the integrated heater Al substrates. Through controlling the voltage applied to the integrated heater, the temperature of the gas-sensing material in the sensor is changed （the temperature varies in the range of 25-400℃）. The effect of the temperature on the resistance of gas sensor is investigated. An empirical formula is developed for calculating the change of the resistance with the temperature based on the grain boundary potential barrier model. The data calculated from the empirical formula and the experimental data are compared. The results show that the formula can well describe the temperature dependence of the resistance of particular sensors.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2009年第6期40-41,45,共3页
Materials Reports
基金
国家自然科学基金资助项目(10874140)
甘肃省自然科学基金资助项目(0710RJZA105)
关键词
气敏材料
电阻
温度
晶界势垒
gas-sensing material, resistance, temperature, potential barrier at grain boundary
