电化学法制备硅纳米线

Preparation of Silicon Nanowires by Electrochemical Method

硅纳米线除具有半导体所具有的特殊性质，还具有独特的光学、电学和化学性质，在纳电子器件、光电子器件以及新能源等方面显示良好的应用前景^[1,2]。目前，硅纳米线的制备方法、结构性能等研究受到了广泛的关注。在制备方法上，

Silicon nanowires were synthesized from nanometer silicon dioxide powder under potentiostatic electrolysis at -1.20V （vs Pt reference） for 4 h in molten CaCl2 at 900℃. The morphology, structure and chemical composition of the samples prepared by electroreduction method were characterized by field-emission scanning electron microscopy （FE-SEM）, High-resolution transmission electron microscopy （HRTEM） coupled with electron energy dispersive spectroscopy （EDS）, laser Raman and X-ray diffraction （XRD）. The results revealed that silicon nanowires were crystalline with a diamond cubic structure, the diameter was distributed from 50 nm to 80 nm and the length was generally several micrometers. The formed nanowires basically consisted of silicon monocrystalline and amorphous oxide sheath.