摘要
本文研究了气相扩散PbO、Bi2O3、PbO-Bi2O3使SrTiO3基陶瓷基片晶界绝缘化,气相扩散PbO-Bi2O3制备的陶瓷综合性能优良.讨论了气相扩散PbO-Bi2O3的工艺条件对半导化SrTiO3基陶瓷的介电性能(ε)、介电损耗(D)、非线性系数(α)及电阻率(ρ)的影响,用SEM和EPA对微观结构进行了观察和分析,结果显示PbO和Bi2O3主要集中在晶界附近。用SrTiO3气相扩散法成功地获得了ε>30000、D<0.01、α>6.0、ρ>5.0×1011的SrTiO3基多功能陶瓷。
The reinsulation of grain boundary of SrTiO3-based ceramics with PbO or Bi2O3 or PbO-Bi2O3 was studied. The good comprehensive properties were achieved for the ceramic materials with PbO-Bi2O3. The effect of vapor phase diffusion with PbO-Bi2O3 on electrical properties of SrTiO3-based ceramics was discussed.The relationship between electrical properties ,such as dielectric constant(ε),dielectric loss(D),non-linear coefficient(α) and electric resistivity(ρ),and diffusion conditions was got. Microstructure was investigated by SEM. The distributions of element was examined by EPA. The results show that PbO.and Bi2O3 deposit most at grain boundary. The prepared ceramics have good electrical properties (ε>30000,D<0.01Ω·cm,α>6.0,ρ>5.0×1011).
出处
《云南化工》
CAS
1998年第1期17-20,41,共5页
Yunnan Chemical Technology