低温烧结SrTiO_3晶界层电容器材料的体深能级的研究

Study of Deep Bulk Traps of Low-Temperature-Sintered SrTiO_3 GBBL Capacitors

本文用导纳谱法测得低温一次烧结SrTiO3晶界层电容器材料的体深能级位于导带底下0.21eV处．提出了SrTiO3顺电行为和体深能级综合效应对材料介电性质的作用，解释了材料ε～T曲线上的异常“凸起”和显著的介电频散现象．根据给出的合体深能级的等效电路模型，计算机拟合结果与实验数据基本相符．

A deep bulk trap level of SrTiO3 grain boundary barrier laper (GBBL) capacitor material was found to be at about 0.21eV below its conduction band by means of admittance spectroscopy. With temperature increasing from --150 to 10℃, the εeff protrusion and then the conspicuous dispersity of dielectric constant were observed and explained. In terms of a combination of paraelectric behaviour of SrTiO3 and a deep bulk trap effect, an equivalent circuit model involving the deep bulk level was given. Based on the model, a reasonable cosistency of calculated dielctric constants with experimental data was revealed.