摘要
本文研制V2O5和V2O5-CuO复合添加的BiNbO4微波介质陶瓷.实验结果表明:CuO-V2O5复合添加,比单独加入V2O5能大幅度地降低BiNbO4陶瓷的烧结温度,有效地抑制晶粒异常生长,促使瓷体晶粒尺寸较为均匀和致密,降低高频和微波频率的tanδ值.CuO-V2O5复合添加BiNbO4介质陶瓷,在3GHz频率下,εr=44;
V2o5 doping and complex V2O5-CuO doping BiNBO4 ceramics were studied. The experimental results indicate that complex doping is more efficient in decreasing the sintering temperature,preventing exaggerated grain growth and improving the dielectric loss of the BiNbO4 -based ceramics. This complex doping BiNbO4 has more homogeneous grain size and higher density than that of V2O5-doped one, and their microwave properties are εr=44, Q=2000(3MHz).
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1998年第2期176-180,共5页
Journal of Inorganic Materials
基金
美国MOTOROLA资助
关键词
BINBO4
介质陶瓷
低温烧结
陶瓷
微波
BiNbO4 dielectric ceramics, two-steps synthetic processing, low-firing