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Growth and electrical properties of high-quality Mg-doped p-type Al_(0.2)Ga_(0.8)N films

Growth and electrical properties of high-quality Mg-doped p-type Al_(0.2)Ga_(0.8)N films
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摘要 The growth of high-performance Mg-doped p-type AlxGa1-xN （x = 0.2） using metal-organic chemical vapor deposition is reported. The influence of growth conditions （growth temperature, magnesium flow, and thermal annealing temperature） on the electrical properties of Mg-doped ptype AlxGa1-xN （x = 0.2） has been investigated. Using the optimized conditions, we obtained a minimum p-type resistivity of 0.71 Ω·cm for p-type AlGaN with 20% Al fraction. The growth of high-performance Mg-doped p-type AlxGa1-xN （x = 0.2） using metal-organic chemical vapor deposition is reported. The influence of growth conditions （growth temperature, magnesium flow, and thermal annealing temperature） on the electrical properties of Mg-doped ptype AlxGa1-xN （x = 0.2） has been investigated. Using the optimized conditions, we obtained a minimum p-type resistivity of 0.71 Ω·cm for p-type AlGaN with 20% Al fraction.
作者 周小伟 李培咸 许晟瑞 郝跃
机构地区 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第4期10-13,共4页 半导体学报（英文版）
基金 supported by the National High-Tech Research and Development Program of China (No. 2996AA03A108) the National Natural Science Foundation of China (No. 60736033)
关键词 p-type AIGaN thermal annealing RESISTIVITY p-type AIGaN thermal annealing resistivity
分类号 TN304.055 [电子电信—物理电子学]
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参考文献17

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Journal of Semiconductors
2009年 第4期

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