摘要
SiC floating junction Schottky barrier diodes were simulated with software MEDICI 4.0 and their device structures were optimized based on forward and reverse electrical characteristics. Compared with the conventional power Schottky barrier diode, the device structure is featured by a highly doped drift region and embedded floating junction region, which can ensure high breakdown voltage while keeping lower specific on-state resistance, solved the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with opti- mized structure parameter, the breakdown voltage can reach 4 kV and the specific on-resistance is 8.3 mΩ·cm2.
SiC floating junction Schottky barrier diodes were simulated with software MEDICI 4.0 and their device structures were optimized based on forward and reverse electrical characteristics. Compared with the conventional power Schottky barrier diode, the device structure is featured by a highly doped drift region and embedded floating junction region, which can ensure high breakdown voltage while keeping lower specific on-state resistance, solved the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with opti- mized structure parameter, the breakdown voltage can reach 4 kV and the specific on-resistance is 8.3 mΩ·cm2.
基金
supported by the Open Fund of Key Laboratory of Wide Bandgap Semiconductors Material and Devices, Ministry of Education,China
