期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

退火温度对ZnO薄膜性能的影响 被引量：1

Influence of annealing temperature on properties of ZnO films
下载PDF
导出
摘要 采用射频磁控溅射法在硅衬底上制备出具有(002)择优取向ZnO薄膜.利用X射线衍射分析(XRD)、原子力显微镜(AFM)、双光束紫外可见分光光度计等仪器分析了退火温度对ZnO薄膜的结构、应力状态、表面形貌和光学性能的影响.结果表明,在射频功率为100W时所制备的ZnO薄膜,当退火温度为600℃时,能获得最佳c轴取向和最小半高宽,此时ZnO薄膜具有较低的表面粗糙度和较高的透射率. ZnO thin films are deposited on Si substrate by radio frequency （RF） magnetron sputtering tech- nique. By XRD, AFM, and Grating-Spectrometer, the influence of annealing temperature on structural characteristics, the stress, morphology and optical properties for ZnO films are studied. The results show that the ZnO films with RF power （100W） and annealing temperature（600℃） can obtain its est e-axis orientation and the smallest FWHM, and the film possessed the lower surface roughness and the higher transmission.
作者 余花娃 杜亚利 王晶 严祥安 高宾
机构地区 西安工程大学理学院
出处 《纺织高校基础科学学报》 CAS 2009年第1期102-106,共5页 Basic Sciences Journal of Textile Universities
基金 国家自然科学基金资助项目(50271038) 国家重点基础研究发展规划基金资助项目(2004CB619302) 西安工程大学校管项目(2008XG21) 西安工程大学校管项目(2006XG26) 西安工程大学校管项目(2008XG24)
关键词 ZNO薄膜 X射线衍射分析 原子力显微镜 退火温度 透射率 ZnO thin films XRD AFM annealing temperature transmission
分类号 O472.1 [理学—半导体物理]
  • 相关文献

参考文献13

  • 1Frans C.M.Van De Pol,陈运祥.ZnO薄膜的性能和应用[J].压电与声光,1991,13(6):63-72. 被引量：9
  • 2余花娃,杜亚利,王晶,刘静.磁控溅射制备参数对ZnO薄膜结构和光学性能的影响[J].纺织高校基础科学学报,2007,20(2):181-185. 被引量：3
  • 3余花娃,王晶,张英堂,严祥安,刘静.ZnO薄膜的制备及其特性研究[J].西安工程科技学院学报,2007,21(4):536-540. 被引量：1
  • 4LIB S, LIU Y C, CHU Z S, et al. High quality ZnO thin films grown by plasma enhanced chemical vapor deposition [ J ]. J Appl Phys ,2002 ,91 ( 1 ) :501-505.
  • 5FIDDES A J:C,DUROSE K,BRINICMAN A W, et al. Preparation of ZnO films by spray pyrolysis[J]. J Cryst Growth,1996, 159(1) :210-213.
  • 6ALAM M J,CAMERON D C. Preparation and properties of transparent conductive aluminum-doped zinc oxide thin films by sol-gel process[ J]. J Vae Sei Teehnol A,2001,19(4) :1 642-1 646,
  • 7OHGAKI T, OHASHI N, KAKEMOTO H,et al. Growth condition dependence of morphology and eleetrie properties of ZnO films on sapphire substrates prepared by molecular beam epitaxy[ J ]. J Appl Phys ,2003,93 (4) :1 961-1 965.
  • 8RYA Y R, ZHU S, BUDAI J D, et al. Optical and structural properties of ZnO films deposited on GaAs by pulsed laser deposition [ J ]. J Appl Phys ,2000 ,88 ( 1 ) :201-204.
  • 9MINAMI T, IDA S, MIYATA T. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation [ J ]. Thin Solid Films,2002,416 ( 1-2 ) :92-96.
  • 10KIM K H, PARK K C, MAD Y. Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering [ J ]. J Appl Phys, 1997,81 (12) :7 764-7 772.

二级参考文献30

  • 1余花娃,杜亚利,王晶,刘静.磁控溅射制备参数对ZnO薄膜结构和光学性能的影响[J].纺织高校基础科学学报,2007,20(2):181-185. 被引量：3
  • 2LEE J B, LEE M H, PARK C K, et al. Effects of lattice mismatches in ZnO/substrat structures on the orientations of ZnO films and characteristics of SAW devices[J]. Thin Solid Films, 2004(447/448):296-301.
  • 3KRUPANIDHI S B, SAYER M, Position and pressure effects in rf magnetron reactive sputter deposition of piezoelectric zinc oxide[J]. J Appl Phys,1984,56(11):3 308-3 318.
  • 4YATA M, TODA A, NAGATSUYU H, et al. Ultrahigh vacuum in situ transmission electron microscopy observations of molecular-beam epitaxially grown InSb(111)[J]. J Appl Phys,1988,63(12):5 751-5 755.
  • 5LI B S, LIU Y C, CHU Z S, et al. High quality ZnO thin films grown by plasma enhanced chemical vapor deposition [J]. J Appl Phys,2002,91(1):501-505.
  • 6FIDDES A J C, DUROSE K, BRINKMAN A W, et al. Preparation of ZnO films by spray pyrolysis[J]. J Cryst Growth, 1996,159 (1) :210-213.
  • 7ALAM M J, CAMERON D C. Preparation and properties of transparent conductive aluminum-doped zinc oxide thin films by sol--gel process[J]. J Vac Sci Technol A,2001,19(4):1 642-1 646.
  • 8OHGAKI T, OHASHI N, KAKEMOTO H, et al. Growth condition dependence of morphology and electric properties of ZnO films on sapphire substrates prepared by molecular beam epitaxy[J]. J Appl Phys,2003,93 (4):1961- 1965.
  • 9RYA Y R, ZHU S, BUDAI J D, et al. Optical and structural properties of ZnO films deposited on GaAs by pulsed laser deposition[J]. J Appl Phys,2000,88(1) :201-204.
  • 10MINAMI T, IDA S, MIYATA T. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation[J]. Thin Solid Films,2002,416(1/2):92-96.

共引文献10

同被引文献9

  • 1张琳丽,郭常新,陈建刚,胡俊涛.醋酸锌一步溶液法制备的各种形貌ZnO棒[J].发光学报,2005,26(4):521-525. 被引量：6
  • 2陈红升,齐俊杰,黄运华,廖庆亮,张跃.Sn掺杂ZnO半导体纳米带的制备、结构和性能[J].物理化学学报,2007,23(1):55-58. 被引量：20
  • 3JUN Jin Hyung,SEONG Hojun,CHO Kyoungah,et al.Ultraviolet photodetectors based on ZnO nanoparticles[J].Ceramics International,2009,25(7):2 797-2 801.
  • 4MURUGANANDHAM M,CHEN I S,WU J J,et al.Effect of temperature on the formation microporous ZnO bundles and its application in photocatalysis[J].Journalof Hazadous Materials,2009,172(2/3):700-706.
  • 5JO S H,BANERJEE D,REN Z F.Field emission of zinc oxide nanowires grown on carbon cloth[J].Appl Phys Lett,2004,85(8):1 407-1 409.
  • 6LIN S S,SONG J H,LU Y F,et al.Identifying individual n-and p-type ZnO nanowires by the output voltage sign of piezoelectric nanogenerator[J].Nanotechnology,2009,20:365703-1-5.
  • 7CHEN Y W,LIU YC,LU S X,et al.Optical properties of ZnO and ZnO:In nanorods assembled by sol-gel method[J].Journal of Chemical Physics,2005,123:134701.
  • 8BAE S Y,NA C W,KANG J H.Comparative structure and optical properties of Ga-,In-,and Sn-doped ZnO nanowires synthesized via thermal evaporation[J].Journal of Physical Chemistry B,2005,109:2 526-2 531.
  • 9HONG R J,JISNG X.Studies on ZnO:Al thin films deposited by in-line reactive mid-frequency magnetron sputtering[J].Applied Surface Science,2003,207:341-350.

引证文献1

二级引证文献1

纺织高校基础科学学报
2009年 第1期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部