掺铟氧化锌纳米阵列的制备、结构及性质研究

Fabrication and characterization of In-doped zinc oxide nanoarrays

通过碳热辅助化学气相沉积法,用Au做催化剂在850℃下制备了铟掺杂的氧化锌(In/ZnO)纳米阵列.纳米棒的尺寸均匀,表面光滑,直径约为400nm,长为2—3μm.能量色散谱和X射线光电子能谱分析表明,六棱柱状的纳米阵列中成功地进行了In的掺杂,含量约为0.8%.室温光致发光谱显示掺杂后的紫外发射峰位有红移,峰的半高宽变大,没有观察到绿光发射峰位.拉曼光谱显示出ZnO的峰位有不同程度的偏移,并且有新的峰位出现,这表明In的掺杂有效地取代了部分Zn的晶格.

In-doped ZnO nanoarrays were successfully synthesized by the carbon thermal reduction deposition process,at 850℃ using Au catalyst.The length of legs of T-ZnO nanorods is 2—3 μm and the diameter is ～400 nm,dimensionally uniform and the surface smooth.Energy dispersive spectroscopy and X-ray photoelectron spectroscopy investigations show that the In content of nanorods reaches about 0.8%.Room temperature photoluminescence spectra of the nanoarrays shows that the ultraviolet emission peak red-shifts and becomes broader after doping.Raman scattering study shows that ZnO peaks have different shift,and a new peak appears,which proved a part of In atoms replacing Zn in the crystal lattice.