摘要
以Corial 200M型干法刻蚀机的三种刻蚀模式为基础,分析了微波等离子体刻蚀技术的优缺点,并讨论了下电极结构对干法刻蚀形貌、一致性和重复性的影响。利用微波等离子体刻蚀技术与反应离子刻蚀技术相结合,实现了SiO2各向同性刻蚀,成功应用于质量控制和失效分析等环节。
Based on three etching model of the Corial-200M type dry etching system, microwave plasma etching technology was studied, and the impact on the etching profile, consistency and repeatability by changing the cathode structure. By using the microwave plasma etching technology and reactive ion etching technology, SiO2 isotropic etching was realized and applied on quality control and failure analysis successfully.
出处
《电子工业专用设备》
2009年第4期13-18,共6页
Equipment for Electronic Products Manufacturing
