硅晶片抛光加工工艺的实验研究

A study of double sided polishing processing technic of silicon wafer

双面抛光已成为硅晶片的主要后续加工方法,但由于需要严格的加工条件,很难获得理想的超光滑表面。设计了硅片双面抛光加工工艺新路线,并在新研制的双面抛光机上对硅晶片进行抛光加工,实验研究了不同加工参数对桂晶片表面粗糙度和材料去除率的影响。采用扫描探针显微镜和激光数字波面干涉仪分别对加工后的硅晶片进行测量,实验结果表明:在优化实验条件下硅晶片可以获得表面粗糙度0.533nm的超光滑表面。

Double sided polishing process has become a main machining method for silicon wafer finishing process, but it is difficult to get ultra-smooth surface with the very stringent machining conditions. The new way of double sided polishingprocessing technic of silicon wafer was designed,and polished process on the new double sided polishing machine. RemoVal Rate and Roughness Under Different processed parameter were studied.The roughness was measured by AFM nanascope and the flatness was measured by a Digital Laser Wave Frontlnterferometer,Experiments indicated：the ultra-smooth surface of silicon wafer with Ra 0.533mn has been obtained based on the optimized condition.