摘要
介绍了大规模集成电路中两种ＣＶＤ二氧化硅膜的淀积，并对这两种二氧化硅膜的淀积方式及其性能进行了比较。指出ＴＥＯＳ淀积方式。
In this paper, two kinds of CVD SiO 2 deposition process used in VLSI process are introduced. Compared with each other in their characters, CVD TEOS SiO 2 is better and will become a major process of SiO 2 deposition for future VLSI production.
出处
《电子器件》
CAS
1998年第2期113-117,共5页
Chinese Journal of Electron Devices
