摘要
本文阐述了驻波效应的成因及其对微细图形光刻，特别是对深亚微米和亚半微米光刻的影响；分析了驻波强度分布；根据抗蚀剂的物理和化学机制，建立了抗蚀剂显影过程的数学和物理模型，并开展了计算机模拟和光刻曝光实验；研究了减小驻波效应的方法；给出了部分模拟和实验结果。
The formation of the standing wave and its effect on micro pattern lithography, especially on deep submicron and sub halfmicron lithography, are des cribed. The intensity distribution of the standing wave is analyzed. Based on chemical and physical properties of the resist,the mathematical and physical models of developing process of the resist are set up. The computer simulation and optical lithography experiments are carried out. The method for reducing standing wave effect is studied. Several results of the simulation and experiment are given.
出处
《微细加工技术》
1998年第2期51-60,共10页
Microfabrication Technology
基金
微细加工光学技术国家重点实验室基金
关键词
驻波效应
光刻技术
集成电路
Standing wave effect
Optical lithography
Simulation
