低温PECVD法制备半导体的复合钝化膜

Preparation Compound Passivation Film of Semiconductor by Low Temperature PECVD Means

本文主要是以ＳｉＨ４、Ｎ２Ｏ和Ｓｉ３Ｈ４、ＮＨ３、Ｎ２作为气体源，在平行板电容耦合式淀积设备上，采用等离子增强化学气相淀积（ＰＥＣＶＤ）法制备ＳｉＯ２－Ｓｉ３Ｎ４复合钝化膜。

The article' s main content is preparation SiO2-Si3N4 compound passivation film by plasma enhance chemical vapour gas phase deposition ( PECVD ) means, of SiH4 , N2O and Si3H4. , NH3,N2etc.for gas source on parallel board condenser coupled model deposition installation.