摘要
全硅光电子集成电路具有与硅集成电路工艺的兼容性。通过使用便宜的硅材料和先进的硅大规模集成电路制备工艺,能以很低的成本实现光电子信息传递和处理的单片集成。文章在介绍了最近几年多孔硅发光器件在电致发光效率、稳定性和频率响应方面取得重要成果的基础上,叙述了基于多孔硅发光器件的全硅光电子集成电路的进展情况。
All-silicon optoelectronic integrated circuits are compatible with standard silicon microelectronic processing technology.This compatibility is the most important characteristic to distinguish the all-silicon integration from Ⅲ-Ⅴ compound optoelectronic systems.By use of an advanced microelectronic technology and cheap silicon material,optoelectronic integration can be implemented at lower cost.Therefore,all-silicon optoelectronic integration is of great significance for the future development of optoelectronics.Based on the introduction of the achievements in performances such as electroluminescence efficiency,lifetime and frequency response for porous silicon light emitting diodes(LEDs),the advances are presented in all-silicon optoelectronic integrated circuits.
出处
《半导体光电》
CAS
CSCD
北大核心
1998年第3期158-161,193,共5页
Semiconductor Optoelectronics
关键词
多孔硅
集成电路工艺
全硅光电子IC
VLSI
Porous Silicon,All-silicon Optoelectronic Integrated Circuits,IC Technology