AlGaAs/GaAs HBT能量输运模型

Energy transport model of AlGaAs/GaAs heterojunction bipolar transistors

在弛豫时间近似条件下，由波尔兹曼输运方程的前三阶推导出能模拟ＨＢＴ性能的流体动力学传输模型．分析了能量（动量）方程中的各个物理量，考虑了不同能谷散射对能量弛豫时间影响，计入了电子能量中的漂移动能，同时考虑了异质结能带的各种效应．使用牛顿法同时求解一维稳态方程组，分析了典型结构的ＡｌＧａＡｓ／ＧａＡｓＨＢＴ器件工作物理图像．

The Hydrodynamic Transport Model, comprising the first three moments of Boltzmann transport equation (BTE) in the relaxation time approximation, is used to model the AlGaAs/GaAs HBT. All terms in the transport equations are retained. Furthermore, the formalism here retains the energy as a solution variable, which obviates the need to split the total kinetic eneregy into intertial drift and thermal terms. The transport equations are solved simultaneously in one dimension and in the steady state. The simulation of the AlGaAs/GaAs HBT with a typical structure has been performed.